Analysis of the role of mobility-lifetime products in the performance of amorphous silicon p-i-n solar cells

نویسندگان

  • J. M. Asensi
  • J. Merten
  • J. Andreu
چکیده

An analytical model of an amorphous silicon p-i-n solar cell is presented to describe its photovoltaic behavior under short-circuit conditions. It has been developed from the analysis of numerical simulation results. These results reproduce the experimental illumination dependence of short-circuit resistance, which is the reciprocal slope of the I(V) curve at the short-circuit point. The recombination rate profiles show that recombination in the regions of charged defects near the p-i and i-n interfaces should not be overlooked. Based on the interpretation of the numerical solutions, we deduce analytical expressions for the recombination current and short-circuit resistance. These expressions are given as a function of an effective mt product, which depends on the intensity of illumination. We also study the effect of surface recombination with simple expressions that describe its influence on current loss and short-circuit resistance. © 1999 American Institute of Physics. @S0021-8979~99!03705-6#

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study the Effect of Silicon Nanowire Length on Characteristics of Silicon Nanowire Based Solar Cells by Using Impedance Spectroscopy

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

متن کامل

THE ROLE OF PHASE TRANSITIONS BETWEEN AMORPHOUS AND MICROCRYSTALLINE SILICON ON THE PERFORMANCE OF PROTOCRYSTALLINE Si:H SOLAR CELLS

A systematic study has been carried out to quantify the effect of microcrystallite nucleation in the intrinsic layer of protocrystalline Si:H p-i-n solar cells prepared by rf plasma enhanced chemical vapor deposition (PECVD). Real-time spectroscopic ellipsometry (RTSE) results that have previously identified the transitions from amorphous to microcrystalline phase were confirmed with atomic for...

متن کامل

Investigation of the Effect of Band Offset and Mobility of Organic/Inorganic HTM Layers on the Performance of Perovskite Solar Cells

Abstract: Perovskite solar cells have become an attractive subject in the solar energydevice area. During ten years of development, the energy conversion efficiency has beenimproved from 2.2% to more than 22%, and it still has a very good potential for furtherenhancement. In this paper, a numerical model of the perovskite solar cell with thestructure of glass/ FTO/ TiO2/...

متن کامل

Probing the Nature of Annealing Silicon Carbide Samples for Solar Cell

SiC powder preparation using Sol-Gel method. The size of nano-particles grows as the temperature exceeds 900° C. Size of probable agglomerations produced, is approximately less than 50nm. The surface is suitable to be used for dye solar cells. SiC emission occurs at wavelength area of 11.3μm or wave number area of 884.95 cm-1. In this paper probing the nature of annealed SiC samples in mixture,...

متن کامل

HOPPING TRANSPORT IN n-a-Si:H EMITTERS OF SILICON HETEROSTRUCTURE SOLAR CELLS

Hopping transport through heterostructure solar cells based on B-doped crystalline silicon wafers with highly P-doped hydrogenated amorphous silicon emitters with different thicknesses is investigated at T = 10 K with pulsed electrically detected magnetic resonance. The measurements show that transport is dominated by conduction band tail states (g ≈ 2.0046) with a distribution of their mutual ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999